PERTEMUAN 15

PERTEMUAN XV
PENGERTIAN DAN PRINSIP KERJA JFET LANJUTAN
MUTIARA WIDASARI SITOPU, S.T., M.T.
DASAR ELEKTRONIKA SOLID STATE
N-CHANNEL JFET
 N channel JFET:



Major structure is n-type material (channel)
between embedded p-type material to form 2 pn junction.
In the normal operation of an n-channel device,
the Drain (D) is positive with respect to the
Source (S). Current flows into the Drain (D),
through the channel, and out of the Source (S)
Because the resistance of the channel depends
on the gate-to-source voltage (VGS), the drain
current (ID) is controlled by that voltage
INTRODUCTION (FET)
 Field-effect transistor (FET) are important
devices such as BJTs
 Also used as amplifier and logic switches
 What is the difference between JFET and
BJT?
BJT IS CURRENT-CONTROLLED
FET IS VOLTAGE-CONTROLLED
TYPES OF FIELD EFFECT TRANSISTORS
(THE CLASSIFICATION)
n-Channel JFET

FET
JFET
p-Channel JFET
MOSFET (IGFET)
Enhancement
MOSFET
n-Channel
EMOSFET
p-Channel
EMOSFET
Depletion
MOSFET
n-Channel
DMOSFET
p-Channel
DMOSFET
N-CHANNEL JFET..
INTRODUCTION.. (ADVANTAGES OF FET
OVER BJT)








High input impedance (M)
(Linear AC amplifier system)
Temperature stable than BJT
Smaller than BJT
Can be fabricated with fewer processing
BJT is bipolar – conduction both hole and
electron
FET is unipolar – uses only one type of current
carrier
Less noise compare to BJT
Usually use as an Amplifier and logic switch
JUNCTION FIELD-EFFECT TRANSISTOR..
 There are 2 types of JFET
 n-channel JFET
 p-channel JFET
 Three Terminal
 Drain – D
 Gate -G
 Source – S
SYMBOLS
Drain
Drain
Gate
Gate
Source
n-channel JFET
Source
p-channel JFET
JFET CHARACTERISTIC FOR VGS = 0 V AND 0<VDS<|VP|
 To start, suppose VGS=0
 Then, when VDSis increased, ID increases.
Therefore, IDis proportional to VDSfor small values
of VDS
 For larger value of VDS, as VDSincreases, the
depletion layer become wider, causing the
resistance of channel increases.
 After the pinch-off voltage (Vp) is reached, the ID
becomes nearly constant (called as ID maximum,
IDSS-Drain to Source current with Gate Shorted)
JFET FOR VGS = 0 V AND 0<VDS<|VP|
Channel
becomes
narrower as
VDS is
increased
PINCH-OFF (VGS = 0 V, VDS = VP).
ID versus VDS
for VGS = 0 V and 0<VDS<|Vp|
JFET Characteristic Curve
JFET FOR
(APPLICATION OF A NEGATIVE VOLTAGE TO THE GATE OF A JFET
)
JFET CHARACTERISTIC CURVE..
 For negative values of VGS, the gate-to-channel
junction is reverse biased even with VDS=0
 Thus, the initial channel resistance of channel is
higher.
 The resistance value is under the control of VGS
 If VGS = pinch-off voltage(VP)
The device is in cutoff (VGS=VGS(off) = VP)
 The region where ID constant – The saturation/pinchoff region
 The region where ID depends on VDS is called the
linear/ohmic region
CHARACTERISTICS FOR N-CHANNEL
JFET
TRANSFER CHARACTERISTICS
The input-output transfer characteristic of
the JFET is not as straight forward as it is
for the BJT. In BJT:
IC= IB
which  is defined as the relationship
between IB (input current) and IC (output
current).
TRANSFER CHARACTERISTICS..
• IN JFET, THE RELATIONSHIP BETWEEN VGS (INPUT
VOLTAGE) AND ID (OUTPUT
CURRENT) IS USED TO DEFINE THE TRANSFER CHARACTERISTICS. IT IS
CALLED AS SHOCKLEY’S EQUATION:
V GS 

1 
VP 

2
ID = IDSS
VP=VGS (OFF)
The relationship is more complicated (and not
linear)
As a result, FET’s are often referred to a
square law devices
TRANSFER CHARACTERISTICS…
 Defined by Shockley’s equation:


V
I D  IDSS  1  GS 
 VGS

(off
)


2
VP  VGS (off )
 Relationship between IDand VGS.
 Obtaining transfer characteristic curve axis
point from Shockley:

When VGS= 0 V, ID= IDSS

When VGS= VGS(off)or Vp, ID= 0 mA
Transfer Characteristics
JFET Transfer Characteristic Curve
JFET Characteristic Curve
EXERCISE 1
Sketch the transfer defined by
IDSS= 12 mA dan VGS(off) = - 6
VGS
ID
0
IDSS
0.3Vp
IDSS/2
0.5Vp
IDSS/4
Vp
0 mA

ID 
VGS = VP1 
I
DSS 

2
VGS 

ID = IDSS  1 
VP 

EXERCISE 1
Sketch the transfer defined by IDSS= 12 mA dan VGS(off)
= Vp=- 6
IDSS
VGS 

ID = IDSS  1 
VP 

2
VGS =0.3VP
VGS =0.5VP
IDSS/2
IDSS/4

ID 
VGS = VP1 
I
DSS 

ANSWER 1
EXERCISE 2
Sketch the transfer defined by
IDSS= 4 mA dan VGS(off) = 3 V
VGS
ID
0
IDSS
0.3Vp
IDSS/2
0.5Vp
IDSS/4
Vp
0 mA

ID 
VGS = VP1 
I
DSS 

2
VGS 

ID = IDSS  1 
VP 

EXERCISE 2
Sketch the transfer defined by
IDSS= 4 mA dan VGS(off)= 3V
IDSS
VGS 

ID = IDSS  1 
VP 

2
IDSS/2
IDSS/4
VGS =0.3VP
VP
VGS =0.5VP

ID 
VGS = VP1 
I
DSS 

Answer 2
ANSWER 2
SEKIAN DAN TERIMA KASIH